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2ED21834S06J

Infineon
Part Number 2ED21834S06J
Manufacturer Infineon
Description 650V half-bridge gate driver
Published Apr 10, 2020
Detailed Description 2ED2183 (4) S06F (J) 2ED2183 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features • Uni...
Datasheet PDF File 2ED21834S06J PDF File

2ED21834S06J
2ED21834S06J

Overview
2ED2183 (4) S06F (J) 2ED2183 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Integrated shoot-through protection and built-in dead time • Logic Operational up to –11 V on VS Pin • Negative Voltage Tolerance On Inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.
3 V, 5 V and 15 V input log...


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