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2ED2304S06F

Infineon
Part Number 2ED2304S06F
Manufacturer Infineon
Description 650V Half Bridge Gate Driver
Published Apr 10, 2020
Detailed Description 2ED2304S06F 2ED2304S06F 650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features  Infineon thin-f...
Datasheet PDF File 2ED2304S06F PDF File

2ED2304S06F
2ED2304S06F

Overview
2ED2304S06F 2ED2304S06F 650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features  Infineon thin-film-SOI-technology  Fully operational to +650 V  Floating channel designed for bootstrap operation  Output source/sink current capability +0.
36 A/-0.
7 A  Integrated Ultra-fast, low RDS(ON) Bootstrap Diode  Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology  10 ns typ.
, 60 ns max.
propagation delay matching  dV/dt immune ±50 V  Gate drive supply range from 10 V to 20 V  Undervoltage lockout for both channels  3.
3 V, 5 V and 15 V input logic compatible  RoHS compliant Product summary VOFFSET IO+/- (typ.
) VOUT De...


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