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IPSA70R600P7S

Infineon
Part Number IPSA70R600P7S
Manufacturer Infineon
Description MOSFET
Published Apr 11, 2020
Detailed Description IPSA70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MO...
Datasheet PDF File IPSA70R600P7S PDF File

IPSA70R600P7S
IPSA70R600P7S

Overview
IPSA70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.
Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.
JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsathigherswitchingfrequencies •Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
IPAK-shortleadwithISO-Standoff Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 700 0.
6 V Ω Qg,typ 10.
5 nC ID,pulse 20.
5 A Eoss @ 400V 1.
2 µJ V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode IPSA70R600P7S Package PG-TO 251 Marking 70S600P7 RelatedLinks see Appendix A Final Data Sheet 1 Rev.
2.
1,2018-02-12 700VCoolMOSªP7PowerTransistor IPSA70R600P7S TableofContents Description .
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