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APT75GT120JU2

Microsemi
Part Number APT75GT120JU2
Manufacturer Microsemi
Description Boost chopper Trench + Field Stop IGBT3
Published Apr 13, 2020
Detailed Description APT75GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT3 K C G E E G K C ISOTOP VCES = 1200V IC = 75A @ Tc =...
Datasheet PDF File APT75GT120JU2 PDF File

APT75GT120JU2
APT75GT120JU2

Overview
APT75GT120JU2 ISOTOP® Boost chopper Trench + Field Stop IGBT3 K C G E E G K C ISOTOP VCES = 1200V IC = 75A @ Tc = 80°C Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch Features  Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated  ISOTOP® Package (SOT-227)  Very low stray inductance  High level of integration Benefits  Low conduction losses  Stable temperature behavior  Very rugged  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Easy paralleling due to positive TC of VCEsat  RoHS Compliant Absolute maximum ratings Symbol Parameter VCES IC1 IC2 ICM VGE PD Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation IFAV Maximum Average Forward Current Duty cycle=0.
5 IFRMS RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Max ratings 1200 100 75 175 ±20 416 27 34 These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Unit V A V W A APT75GT120JU2 – Rev 2 October, 2012 www.
microsemi.
com 1-8 APT75GT120JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) Gate Threshold Voltage IGES Gate – Emitter Leakage Current Test Conditions Min Typ Max Unit VGE = 0V, VCE = 1200V 5 mA VGE =15V IC = 75A Tj = 25°C 1.
4 1.
7 2.
1 Tj = 125°C 2.
0 V VGE = VCE, IC = 3mA 5.
0 6.
5 V VGE = ±20V, VCE = 0V 500 nA Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Del...


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