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RJQ6008DPM

Renesas
Part Number RJQ6008DPM
Manufacturer Renesas
Description IGBT/Diode
Published Apr 13, 2020
Detailed Description RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features  Low collector to emitter saturation voltage...
Datasheet PDF File RJQ6008DPM PDF File

RJQ6008DPM
RJQ6008DPM

Overview
RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 2.
65 V typ.
(IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.
1.
00 Jul 17, 2012 Outline RENESAS Package code: PRSS0005ZB-A (Package name: TO-3PFM-5) 2 Diode IGBT 3 12345 5 4 1.
NC 2.
Cathode 3.
Anode, Collector 4.
Emitter 5.
Gate Absolute Maximum Ratings IGBT Item Symbol Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation J...


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