DatasheetsPDF.com

CSD18534Q5A

Texas Instruments
Part Number CSD18534Q5A
Manufacturer Texas Instruments
Description N-Channel MOSFET
Published Apr 13, 2020
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18534Q5A ...
Datasheet PDF File CSD18534Q5A PDF File

CSD18534Q5A
CSD18534Q5A

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18534Q5A SLPS389D – OCTOBER 2012 – REVISED JUNE 2015 CSD18534Q5A 60 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Isolated Converter Primary Side Switch • Motor Control 3 Description This 7.
8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 60 17 3.
5 VGS = 4.
5 V VGS = 10 V 1.
9 9.
9 7.
8 UNIT V nC nC mΩ mΩ V Ordering Information(1) DEVICE QTY MEDIA PACKAGE CSD18534Q5A 2500 13-Inch Reel SON 5 mm × 6 mm CSD18534Q5AT 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited) VALUE 60 ±20 50 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 69 Continuous drain current, TA = 25°C(1) IDM Pulsed drain current, TA = 25°C(2) Power dissipation(1) PD Power dissipation, TC = 25°C 13 229 3.
1 77 TJ, Operating junction, Tstg Storage temperature –55 to 150 EAS Avalanche energy, single pulse ID = 40 A, L = 0.
1mH, RG = 25 Ω 80 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1 inch2, 2 oz.
Cu pad on a 0.
06 inch thick FR4 PCB.
(2) Max RθJC = 2.
0°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 28 TC = 25°C I...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)