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CSD17309Q3

Texas Instruments
Part Number CSD17309Q3
Manufacturer Texas Instruments
Description N-Channel MOSFET
Published Apr 13, 2020
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17309Q3 SLPS261B – MARCH 20...
Datasheet PDF File CSD17309Q3 PDF File

CSD17309Q3
CSD17309Q3

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17309Q3 SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features •1 Optimized for 5 V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.
3 mm × 3.
3 mm Plastic Package 2 Applications • Notebook Point of Load • Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems 3 Description This 30 V, 4.
2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 7.
5 1.
7 VGS = 3 V VGS = 4.
5 V VGS = 8 V 1.
2 6.
3 4.
9 4.
2 UNIT V nC nC mΩ V Device CSD17309Q3 CSD17309Q3T .
Ordering Information(1) Media Qty Package Ship 13-Inch Reel 2500 SON 3.
3 × 3.
3 mm Tape and 7-Inch Reel 250 Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, Single Pulse ID = 57 A, L = 0.
1 mH, RG = 25 Ω VALUE 30 +10 / –8 60 20 112 2.
8 UNIT V V A A A W –55 to 150 °C 162 mJ (1) Typical RθJA = 45°C/W when mounted on a 1 inch2 (6.
45 cm2), 2 oz.
(0.
071 mm thick) Cu pad on a 0.
06 inch (1.
52 mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%.
Spacing RDS(on) vs VGS 16 14 ID = 18A RDS(on) - On-State Resistance - mΩ 12 10 TC = 125°C 8 6 4 TC = 25°C 2 0 ...


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