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RGTV60TK65D

ROHM
Part Number RGTV60TK65D
Manufacturer ROHM
Description Field Stop Trench IGBT
Published Apr 13, 2020
Detailed Description RGTV60TK65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.) PD 650V 20A 1.5V@IC=30A 76W Fe...
Datasheet PDF File RGTV60TK65D PDF File

RGTV60TK65D
RGTV60TK65D

Overview
RGTV60TK65D 650V 30A Field Stop Trench IGBT Datasheet VCES IC (100℃) VCE(sat) (Typ.
) PD 650V 20A 1.
5V@IC=30A 76W Features 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss 3) Short Circuit Withstand Time 2μs 4) Built in Very Fast & Soft Recovery FRD 4) Pb - free Lead Plating ; RoHS Compliant Outline TO-3PFM Inner Circuit (2) (1)(2)(3) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD Applications Solar Inverter UPS Welding IH PFC Packaging Specifications Packaging Tube Reel Size (mm) - Tape Width (mm) Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGTV60TK65D Absolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax.
TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 650 30 33 20 120 34 19 120 76 38 40 to +175 55 to +175 Unit V V A A A A A A W W °C °C www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/11 2017.
10 - Rev.
A RGTV60TK65D Thermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Datasheet Symbol Rθ(j-c) Rθ(j-c) Values Min.
Typ.
Max.
Unit - - 1.
97 °C/W - - 2.
29 IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.
Typ.
Max.
Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Unit V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VGE(th) VCE = 5V, IC = 21.
0mA 5.
0 IC = 30A, VGE = 15V VCE(sat) Tj =...


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