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CM1350HG-90X

Mitsubishi
Part Number CM1350HG-90X
Manufacturer Mitsubishi
Description IGBT
Published Apr 13, 2020
Detailed Description < High Voltage Insulated Gate Bipolar Transistor：HVIGBT > CM1350HG-90X HIGH POWER SWITCHING USE INSULATED TYPE 5th-Ve...
Datasheet PDF File CM1350HG-90X PDF File

CM1350HG-90X
CM1350HG-90X

Overview
< High Voltage Insulated Gate Bipolar Transistor：HVIGBT > CM1350HG-90X HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1350HG-90X  I 1350AC·································································  V 4500VCES···························································  1-element in a Pack  Insulated Type  CSTBTTM(III) / RFC Diode  AlSiC Baseplate  UL recognized under UL1557 APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Mar.
2019 (HVM-1075-J) 1 < High Voltage Insulated Gate Bipolar Transistor：HVIGBT > CM1350HG-90X HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V, Tj = -40…+150°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, TC = 105°C Pulse (Note 1) DC Pulse (Note 1) TC = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC VCC = 3400V, VCE ≤ VCES, VGE =15V, Tj =150°C Ratings 4500 4400 ± 20 1350 2700 1350 2700 14700 10200 5100 −50 ~ +150 −50 ~ +150 −55 ~ +150 10 Unit V V A A A A W V V °C °C °C μs ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES Cies Coes Cres QG VCEsat td(on) tr Eon(10%) Eon td(off) tf Eoff(10%) Eoff Item Conditions Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Rise time Turn-on switching energy per puls...


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