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A2C50S65M2

STMicroelectronics
Part Number A2C50S65M2
Manufacturer STMicroelectronics
Description 50A trench gate field-stop IGBT
Published Apr 14, 2020
Detailed Description A2C50S65M2 Datasheet ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode a...
Datasheet PDF File A2C50S65M2 PDF File

A2C50S65M2
A2C50S65M2

Overview
A2C50S65M2 Datasheet ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC ACEPACK™ 2 Features • ACEPACK™ 2 power module – DBC Cu Al2O3 Cu • Converter inverter brake topology – 1600 V, very low drop rectifiers for converter – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode • Integrated NTC Applications • Inverters • Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics.
This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.
Product status A2C50S65M2 Product summary Order code A2C50S65M2 Marking A2C50S65M2 Package ACEPACK™ 2 Leads type Solder contact pins DS12340 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings A2C50S65M2 Electrical ratings 1.
1 1.
1.
1 Inverter stage Limiting values at TJ = 25 °C, unless otherwise specified.
IGBTs Table 1.
Absolute maximum ratings of the IGBTs, inverter stage Symbol Description VCES Collector-emitter voltage (VGE = 0 V) IC Continuous collector current (TC = 100 °C) ICP(1) Pulsed collector current (tp = 1 ms) VGE Gate-emitter voltage PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) TJMAX Maximum junction temperature TJop Operating junction temperature range under switching conditions 1.
Pulse width limited by maximum junction temperature Value 650 50 100 ±20 208 175 -40 to 150 Unit V A A V W °C °C Symbol V(BR)CES VCE(sat) (terminal) VGE(th) ICES IGES Cies Coes Cres Qg td(on) tr Eon(1) Table 2.
Electrical characteristics of the IGBTs, inverter stage Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate threshold voltage Collector cut-off current Gate-e...


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