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ST16045

STMicroelectronics
Part Number ST16045
Manufacturer STMicroelectronics
Description 28V RF Power LDMOS transistor
Published Apr 15, 2020
Detailed Description ST16045 Datasheet 45 W, 28 V, 0.7 to 1.7 GHz RF Power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 ...
Datasheet PDF File ST16045 PDF File

ST16045
ST16045

Overview
ST16045 Datasheet 45 W, 28 V, 0.
7 to 1.
7 GHz RF Power LDMOS transistor 2 1 3 A2 Pin connection Pin Connection 1 Gate 2 Drain 3 Source (bottom side) Features Order code Frequency VDD POUT Gain Efficiency ST16045 1330 MHz 28 V 45 W 20 dB 55 % • High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Applications • GPS • Telecom • Industrial, scientific and medical driver Description The ST16045 is a 45 W, 28 V input matched LDMOS transistor designed for global positioning system and communication/ISM applications with frequencies from 700 to 1700 MHz.
It can be used in class AB, B or C for all typical modulation formats.
Product status link ST16045 Product summary Order code ST16045 Marking ST16045 Package A2 Packing Tape and reel 13" Base / Bulk Qty 160 / 160 DS12788 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com ST16045 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1.
Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
Thermal data Symbol Parameter RthJC (1) Thermal resistance, junction-to-case 1.
TC=85 °C, Tj=200 °C, DC test Symbol HBM CDM Table 3.
ESD protection Parameter Human body model (according to ANSI/ESDA/JEDEC JS001-2017) Charge device model (according to ANSI/ESDA/JEDEC JS-002-2014) Value Unit 65 V -6 to 10 V 32 V -65 to +150 °C +200 °C Value 0.
7 Unit °C/W Class 1B C3 DS12788 - Rev 3 page 2/13 2 Note: Electrical characteristics (TC = 25 °C unless otherwise specified).
Symbol V(BR)DSS IDSS IGSS VGS(th) VGS(Q) VDS(on) Parameter Drain-source breakdown voltage Zero-gate voltage...


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