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SCTH40N120G2V7AG

STMicroelectronics
Part Number SCTH40N120G2V7AG
Manufacturer STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Published Apr 15, 2020
Detailed Description SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an H²PAK-7 package ...
Datasheet PDF File SCTH40N120G2V7AG PDF File

SCTH40N120G2V7AG
SCTH40N120G2V7AG

Overview
SCTH40N120G2V7AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ.
, 33 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code SCTH40N120G2V7AG VDS 1200 V RDS(on) max.
105 mΩ ID 33 A • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC M...


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