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STGW60H65DFB-4

STMicroelectronics
Part Number STGW60H65DFB-4
Manufacturer STMicroelectronics
Description IGBT
Published Apr 15, 2020
Detailed Description STGW60H65DFB-4 Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT TO247-4 2 34 1 C(1, TAB) G(4) ...
Datasheet PDF File STGW60H65DFB-4 PDF File

STGW60H65DFB-4
STGW60H65DFB-4

Overview
STGW60H65DFB-4 Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT TO247-4 2 34 1 C(1, TAB) G(4) K(3) Features • Maximum junction temperature: TJ = 175 °C • Excellent switching performance thanks to the extra driving kelvin pin • Low VCE(sat) = 1.
6 V (typ.
) @ IC = 60 A • Minimized tail current • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters DescriptionE(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the new HB series of IGBTs, which represents...


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