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UJ3C120080K3S

UnitedSiC
Part Number UJ3C120080K3S
Manufacturer UnitedSiC
Description MOSFET
Published Apr 15, 2020
Detailed Description DATASHEET UJ3C120080K3S 1200V-80mW SiC FET Rev. E, August 2021 The UJ3C120080K3S is not recommended for new designs. UJ...
Datasheet PDF File UJ3C120080K3S PDF File

UJ3C120080K3S
UJ3C120080K3S

Overview
DATASHEET UJ3C120080K3S 1200V-80mW SiC FET Rev.
E, August 2021 The UJ3C120080K3S is not recommended for new designs.
UJ3C120070K3S is recommended as a replacement.
CASE G (1) CASE D (2) Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.
Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
1 23 Part Number UJ3C120080K3S Package TO-247-3L Features S (3) Marking UJ3C120080K3S w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic c...


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