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NTBG020N090SC1

ON Semiconductor
Part Number NTBG020N090SC1
Manufacturer ON Semiconductor
Description SiC MOSFET
Published Apr 15, 2020
Detailed Description DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Featur...
Datasheet PDF File NTBG020N090SC1 PDF File

NTBG020N090SC1
NTBG020N090SC1

Overview
DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ.
RDS(on) = 20 mW @ VGS = 15 V • Typ.
RDS(on) = 16 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • Low Effective Output Capacitance (Coss = 295 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC-DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 900 V Gate−to−Source Voltage VGS +22/−8 V Recommended Operation TC < 175°C VGSop +15/−5 V Va...


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