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NTHL060N090SC1

Part Number	NTHL060N090SC1
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Apr 15, 2020
Detailed Description	DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, TO-247-3L NTHL060N090SC1 Featu...
Datasheet	NTHL060N090SC1 PDF File

Overview

DATA SHEET www.
onsemi.
com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, TO-247-3L NTHL060N090SC1 Features • Typ.
RDS(on) = 60 mW @ VGS = 15 V • Typ.
RDS(on) = 43 mW @ VGS = 18 V • Ultra Low Gate Charge (typ.
QG(tot) = 87 nC) • Low Effective Output Capacitance (typ.
Coss = 113 pF) • 100% UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate−to− Source Voltage TC < 175°C VDSS 900...

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NTHL060N090SC1 N-Channel MOSFET - ON Semiconductor

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