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NVHL020N090SC1

Part Number	NVHL020N090SC1
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Apr 15, 2020
Detailed Description	MOSFET – SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NVHL020N090SC1 Features • Typ. RDS(on) = 20 mW • Ul...
Datasheet	NVHL020N090SC1 PDF File

Overview

MOSFET – SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NVHL020N090SC1 Features • Typ.
RDS(on) = 20 mW • Ultra Low Gate Charge (typ.
QG(tot) = 196 nC) • Low Effective Output Capacitance (typ.
Coss = 296 pF) • 100% UIL Tested • Qualified According to AEC−Q101 • RoHS Compliant Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Recommended Operation Values of Gate − Source Voltage TC < 175°C VDSS VGS VGSop 900 +19/−10 +15/−5 V V V Continuous Drain Current RqJC Steady State TC = 25°C Power Dissipation RqJC Continuous Drain Current RqJC Steady TC = 100°C State Power Dissipation RqJC Pulsed Drain Current (Note 2) TA = 25°C Single Pulse Surge Drain Current Capability(Note 3) TA = 25°C, tp = 10 ms, RG = 4.
7 W IDC PDC IDC PDC IDM IDSC 118 A 503 W 83 A 251 W 472 A 854 A Operating Junction and Stor...

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NVHL020N090SC1 N-Channel MOSFET - ON Semiconductor

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