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28N50-CB

UTC
Part Number 28N50-CB
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 17, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel e...
Datasheet PDF File 28N50-CB PDF File

28N50-CB
28N50-CB

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 28N50-CB 28A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 28N50-CB is a N-Channel enhancement mode power MOSFET.
The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.
It can also withstand high energy pulse under the avalanche and commutation mode conditions.
The UTC 28N50-CB is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology.
 FEATURES * RDS(ON) ≤ 0.
22Ω @ VGS=10V, ID=14A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 28N50L-T47-T 28N50G-T47-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R205-523.
A 28N50-CB Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 ±30 V V Drain Current Continuous Pulsed (Note 2) ID IDM 28 56 A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 240 mJ 3.
8 V/ns Power Dissipation Junction Temperature PD 280 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature.
3.
L = 10mH, IAS = 6.
9A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C 4.
ISD≤28A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 60 2.
24 UNIT °C/W °C/W UN...


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