DatasheetsPDF.com

1N70-CB

UTC
Part Number 1N70-CB
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 19, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 1N70-CB Preliminary 1.0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70-CB i...
Datasheet PDF File 1N70-CB PDF File

1N70-CB
1N70-CB

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 1N70-CB Preliminary 1.
0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) < 12Ω @ VGS = 10V , ID = 0.
5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N70L-TA3-T 1N70G-TA3-T 1N70L-TF1-T 1N70G-TF1-T 1N70L-TF2-T 1N70G-TF2-T 1N70L-TF3-T 1N70G-TF3-T 1N70L-TM3-T 1N70G-TM3-T 1N70L-TN3-R 1N70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2016 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R205-295.
a 1N70-CB  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R205-295.
a 1N70-CB Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Drain Current Avalanche Current (Note 2) Continuous Pulsed (Note 2) VGSS ID IDM IAR ±30 1.
0 4.
0 1.
5 V A A A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 11 mJ 4.
6 V/ns TO-220 40 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 21 W TO-251/TO-252 28 W Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)