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UTG25N120

UTC
Part Number UTG25N120
Manufacturer UTC
Description 1200V NPT IGBT
Published Apr 20, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESC...
Datasheet PDF File UTG25N120 PDF File

UTG25N120
UTG25N120

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc.
The UTC UTG25N120 is suitable for the resonant or soft switching applications.
 FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =2.
0V @ IC=25A and TC =25°C * Low switching loss: Eoff, typ=0.
96mJ @ IC=25A and TC=25°C  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N120L-TA3-T UTG25N120G-TA3-T TO-220 UTG25N120L-T3P-T UTG25N120G-T3P-T TO-3P UTG25N120L-T3N-T UTG25N120G-T3N-T TO-3PN UTG25N120L-T47-T UTG25N120G-T47-T TO-247 Note: Pin Assignment: G: Gate C: Collector E: Emitte Pin Assignment 123 GCE GCE GCE GCE Packing Tube Tube Tube Tube UTG25N120G-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220, T3P: TO-3P, T3N: TO-3PN, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R203-050.
d UTG25N120 Preliminary Insulated Gate Bipolar Transistor  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage Continuous Collector Current Collector Current Pulsed (Note 1) TC=25°C TC=100°C VGES IC ICM ±20 50 25 75 V A A A Diode Continuous Forward Current (TC=100°C) IF 25 A Diode Maximum Forward Current IFM 150 A TO-220 89 W Power Dissipation TC=25°C TO-247 PD 200 W TO-3P/TO-3PN 312 W Operating Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratin...


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