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NVHL110N65S3F

ON Semiconductor
Part Number NVHL110N65S3F
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Apr 24, 2020
Detailed Description NVHL110N65S3F MOSFET – Power, N-Channel, SUPERFET) III, FRFET), 650 V, 30 A, 110 mW Description SUPERFET III MOSFET is O...
Datasheet PDF File NVHL110N65S3F PDF File

NVHL110N65S3F
NVHL110N65S3F

Overview
NVHL110N65S3F MOSFET – Power, N-Channel, SUPERFET) III, FRFET), 650 V, 30 A, 110 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features • 700 V @ TJ = 150°C • Typ.
RDS(on) = 93 mW • Ultra Low Gate Charge (Typ.
Qg = 58 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 553 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Applications • Automotive On Board Charger HEV−EV • Automotive DC/DC converter for HEV−EV www.
onsemi.
com VDSS 650 V RDS(on) MAX 110 mΩ @ 10 V D ID MAX 30 A G S N−Channel MOSFET G DS TO−247 LONG LEADS CASE 340CX MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2018 July, 2019 − Rev.
1 $Y&Z&3&K NVHL 110N65S3F $Y &Z &3 &K NVHL110N65S3F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: NVHL110N65S3F/D NVHL110N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage DC AC (f > 1 Hz) 650 V ±30 V ±30 V ID IDM EAS EAR dv/dt Drain Current Drain Current Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt Continuous (TC = 25°C) Continuous (TC = 100°C) Pulsed (Note 1) 30 19.
5 69 380 2.
4 100 A A mJ mJ V/ns Peak Diode...


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