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STGB50H65FB2

Part Number	STGB50H65FB2
Manufacturer	STMicroelectronics
Description	IGBT
Published	Apr 26, 2020
Detailed Description	STGB50H65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package TAB 2 3 1 D²P...
Datasheet	STGB50H65FB2 PDF File

Overview

STGB50H65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package TAB 2 3 1 D²PAK Features • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.
55 V(typ.
) @ IC = 50 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient C(2, TAB) G(1) Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is G1C2TE3 optimized in terms of conduction, thanks to a better VCE(sat) behavio...

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