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STGWA30H65DFB2

Part Number	STGWA30H65DFB2
Manufacturer	STMicroelectronics
Description	IGBT
Published	Apr 26, 2020
Detailed Description	STGWA30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package ...
Datasheet	STGWA30H65DFB2 PDF File

Overview

STGWA30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package Features C(2, TAB) • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.
65 V (typ.
) @ IC = 30 A • Very fast and soft recovery co-packaged diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications G(1) E(3) • Welding • Power factor correction • UPS • Solar inverters • Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of ...

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