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STAC0912-250

Part Number	STAC0912-250
Manufacturer	STMicroelectronics
Description	LDMOS avionics radar transistor
Published	Apr 26, 2020
Detailed Description	STAC0912-250 Datasheet LDMOS avionics radar transistor 1 2 3 STAC780-2B Features Order code Frequency VDD POUT ST...
Datasheet	STAC0912-250 PDF File

Overview

STAC0912-250 Datasheet LDMOS avionics radar transistor 1 2 3 STAC780-2B Features Order code Frequency VDD POUT STAC0912-250 960 to 1215 MHz 28 V 250 W • Excellent thermal stability • Common source configuration • POUT = 250W with 16 dB gain over 960 to 1215 MHz • ST air-cavity STAC packaging technology Gain 16 dB Efficiency 58 % Applications • Avionics Description The STAC0912-250 is a common source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for avionics applications at frequencies range 960 to 1215 MHz.
Pin connection Pin Connection 1 Drain 2 Gate 3 Source (bottom side) Product status link STAC0912-250 Product summary Order code STAC0912-250 Marking 0912-250 Package STAC780-2B Packing Tube Base/bulk quantity 15/90 DS7201 - Rev 8 - April 2020 For further information contact your local STMicroelectronics sales office.
www.
st.
com STAC0912-250 Electrical data 1 1.
1 1.
2 Note: 1.
3 Electrical data Maximum ratings Symbol V(BR)DSS VGS PDISS TJ TSTG Table 1.
Absolute maximum ratings (TCASE= 25 °C) Parameter Drain-source voltage Gate-source voltage Power dissipation (at TCASE = +70 °C) Maximum operating junction temperature Storage temperature range Thermal data Symbol Rthj-case Table 2.
Thermal data Parameter Junction-case thermal resistance Value 80 ±20 928 +200 -65 to +150 Unit V V W °C °C Value 0.
14 Unit °C/W Thermal data at 100 µs - 10% ESD protection characteristics Symbol HBM Table 3.
ESD protection Test methodology Human body model (per JESD22-A114) Class 2 DS7201 - Rev 8 page 2/16 STAC0912-250 Electrical characteristics 2 2.
1 2.
2 Note: Electrical characteristics (TC = 25 °C unless otherwise specified) Static Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(on) GFS Dynamic Parameter Drain-source breakdown voltage Zero gate voltage drain leakage current Gate-source leakage current Gate quiescent voltage Drain-source on voltage Forward transconductance Table 4.
Static Test conditions VGS = 0 V, ...

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