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2SAR574D3FRA

ROHM
Part Number 2SAR574D3FRA
Manufacturer ROHM
Description Power Transistor
Published Apr 28, 2020
Detailed Description 2SAR574D3 FRA PNP -2.0A -80V Power Transistor Parameter VCEO IC Value -80V -2A lOutline 　 　 DPAK TO-252 lFeatures 1)...
Datasheet PDF File 2SAR574D3FRA PDF File

2SAR574D3FRA
2SAR574D3FRA

Overview
2SAR574D3 FRA PNP -2.
0A -80V Power Transistor Parameter VCEO IC Value -80V -2A lOutline 　 　 DPAK TO-252 lFeatures 1) Suitable for Power Driver.
2) Complementary NPN Types : 2SCR574D3 FRA.
3) Low VCE(sat) 　　VCE(sat)=-400mV(Max.
).
　　(IC/IB=-1A/-50mA) lInner circuit Datasheet AEC-Q101 Qualified 　 　 　 　 　 lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No.
Package TO-252 2SAR574D3 FRA (DPAK) Taping Reel size Tape width Quantity code (mm) (mm) (pcs) TL 330 16 2500 Marking 2SAR574D3 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/6 20190527 - Rev.
002 2SAR574D3 FRA 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values -80 -80 -6 -2 -4 10 150 -55 to +150 Unit V V V A A W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min.
Typ.
Max.
Collector-base breakdown voltage BVCBO IC = -100μA -80 - - Collector-emitter breakdown voltage BVCEO IC = -1mA -80 - - Emitter-base breakdown voltage BVEBO IE = -100μA -6 - - Collector cut-off current ICBO VCB = -80V - - -1 Emitter cut-off current IEBO VEB = -4V - - -1 Collector-emitter saturation voltage VCE(sat) IC = -1A, IB = -50mA - -200 -400 DC current gain hFE VCE = -3V, IC = -100mA 120 - 390 Transition frequency f *3 T VCE = -10V, IE = 500mA, f = 100MHz - 280 - Output capacitance Cob VCB = -10V, IE = 0A, f = 1MHz - 30 - Unit V V V μA μA mV - MHz pF Turn-On time Storage time Fall time *1　Pw=10ms Single Pulse *2　Tc=25℃ *3　Pulsed ton IC = -1A, IB1 = -100mA, tstg IB2 = 100mA, VCC ⋍ -10V, RL = 10Ω tf See test circuit - 50 - 300 - 100 - ns ns ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　...


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