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QS8K2FRA

ROHM
Part Number QS8K2FRA
Manufacturer ROHM
Description Small Signal MOSFET
Published Apr 29, 2020
Detailed Description QS8K2FRA   30V Nch+Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 54mΩ ±3.5A 1.5W lFeatures 1) Low on - resista...
Datasheet PDF File QS8K2FRA PDF File

QS8K2FRA
QS8K2FRA


Overview
QS8K2FRA   30V Nch+Nch Small Signal MOSFET VDSS RDS(on)(Max.
) ID PD 30V 54mΩ ±3.
5A 1.
5W lFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified lOutline TSMT8          lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Quantity (pcs) Taping code Marking Embossed Tape 180 8 3000 TR K02 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Pulsed drain current ID ±3.
5 A IDP*1 ±12 A Gate - Source voltage VGSS ±12 V Power dissipation (total) PD*2 1.
5 W PD*3 1.
1 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                                                                                                                   www.
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com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/11 20190527 - Rev.
003 QS8K2FRA            lThermal resistance Parameter Thermal resistance, junction - ambient (total)                 Datasheet                         Symbol RthJA*2 RthJA*3 Values Min.
Typ.
Max.
- - 83.
3 - - 113 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate threshold voltage temperature coefficient Static drain - source on - state resistance Gate resistance Forward Transfer Admittance V(BR)DSS VGS = 0V, ID = 1mA ΔV(BR)DSS ID = 1mA   ΔTj  referenced to 25℃ IDSS VDS = 30V, VGS = 0V IGSS VGS = ±12V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA ΔVGS(th) ID = 1mA   ΔTj  referenced to 25℃ VGS = 4.
5V, ID = 3.
5A RDS(on)*4 VGS = 4.
0V, ID =...



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