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RB095BM-90FH
Part Number
RB095BM-90FH
Manufacturer
ROHM
Description
Schottky Barrier Diode
Published
Apr 29, 2020
Detailed Description
RB095BM-90FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet ...
Datasheet
RB095BM-90FH
PDF File
Overview
RB095BM-90FH
Schottky
Barrier Diode (AEC-Q101 qualified) Data sheet ●Outline VR 90 V Io 6 A IFSM 50 A ●Features High reliability Power mold type Cathode common dual type Low VF ●Inner Circuit ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 ●Structure Quantity(pcs) 2500 Silicon epitaxial planar Taping Code TL Marking B095BM90 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 90 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1) VR Reverse direct voltage 90 V Io IFSM 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=121℃Max.
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 6 50 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention -40 ~ 150 ℃ www.
rohm.
com © 2018- ROHMCo.
, Ltd.
All rights reserved.
1/6 2019/05/27_Rev.
003 RB095BM-90FH Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=3A IR VR=90V Min.
Typ.
Max.
Unit - - 0.
75 V - - 0.
15 mA ●Thermal Characteristics Parameter Symbol Min.
Typ.
Max.
Unit Thermal Resistance (Junction to case)(1) (2) Per diode Per device RθJC - - 6.
6 ℃/W - 4.
0 ℃/W Thermal Resistance (Junction to ambient)(1) (3) Notes (1) Value is guaranteed by design.
RθJA - - 75 ℃/W (2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board,single-sided copper,35μm thickness,reference footprint.
●Character...
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