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RTF016N05FRA

Part Number	RTF016N05FRA
Manufacturer	ROHM
Description	Small Signal MOSFET
Published	May 2, 2020
Detailed Description	RTF016N05FRA 　　Nch 45V 1.6A Small Signal MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 45V 190mΩ ±1.6A 0.8W lFeatures...
Datasheet	RTF016N05FRA PDF File

Overview

RTF016N05FRA 　　Nch 45V 1.
6A Small Signal MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 45V 190mΩ ±1.
6A 0.
8W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT3).
4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified lOutline SOT-323T TUMT3 　　　　　　　　 lInner circuit 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) PU Parameter Symbol Value Unit Drain - Source voltage VDSS 45 V Continuous drain current ID ±1.
6 A Pulsed drain current IDP*1 ±6.
4 A Gate - Source voltage VGSS ±12 V Power dissipation PD*2 0.
8 W PD*3 0.
75 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/11 20160930 - Rev.
001 　　 RTF016N05FRA 　　　　　　 lThermal resistance Parameter Thermal resistance, junction - ambient 　　　　　　　　 Datasheet 　　　　　　　　　　　　　　　　　　 Symbol RthJA*2 RthJA*3 Values Min.
Typ.
Max.
- - 156 - - 167 Unit ℃/W ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　　 referenced to 25℃ Zero gate voltage drain current IDSS VDS = 45V, VGS = 0V Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = 10V, ID = 1mA 　ΔVGS(th) 　 ID = 1mA 　　 ΔTj 　　 referenced to 25℃ Static drain - source on - state resistance VGS = 4.
5V, ID = 1.
6A RDS(on)*4 VGS = 4.
0V, ID = 1.
6A VGS = 2.
5V, ID = 1.
6A Gate resistance RG f = 1M...

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