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RGTH80TK65D

ROHM
Part Number RGTH80TK65D
Manufacturer ROHM
Description Field Stop Trench IGBT
Published May 2, 2020
Detailed Description RGTH80TK65D 650V 40A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 19A 1.6V@IC=40A 66W lF...
Datasheet PDF File RGTH80TK65D PDF File

RGTH80TK65D
RGTH80TK65D

Overview
RGTH80TK65D 650V 40A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.
) PD 650V 19A 1.
6V@IC=40A 66W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching Loss & Soft Switching 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline TO-3PFM lInner Circuit (1)(2)(3) (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications PFC lPackaging Specifications Packaging Reel Size (mm) Tube - UPS Power Conditioner Tape Width (mm) Type Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH80TK65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Collector - Emitter Voltage VCES 650 Gate - Emitter Voltage VGES 30 Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation TC = 25°C TC = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C IC IC ICP*1 IF IF IFP*1 PD PD 31 19 160 28 16 160 66 33 Operating Junction Temperature Tj -40 to +175 Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175 Unit V V A A A A A A W W °C °C www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/11 2016.
01 - Rev.
A RGTH80TK65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min.
Typ.
Max.
Unit - - 2.
27 °C/W - - 3.
76 °C/W lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified) Parameter Symbol Conditions Values Min.
Typ.
Max.
Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - Unit V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - ±200 nA Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage VGE(th) VCE = 5V, IC = 27.
6mA 4.
5 5.
5 6.
5 IC = 40A, VGE =...


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