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R6515ENJ

ROHM
Part Number R6515ENJ
Manufacturer ROHM
Description Power MOSFET
Published May 2, 2020
Detailed Description R6515ENJ 　　Nch 650V 15A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.315Ω ±15A 184W lFeatures 1) Low on-resistance 2)...
Datasheet PDF File R6515ENJ PDF File

R6515ENJ
R6515ENJ


Overview
R6515ENJ 　　Nch 650V 15A Power MOSFET VDSS RDS(on)(Max.
) ID PD 650V 0.
315Ω ±15A 184W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S) 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6515ENJ Basic ordering unit (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±15 A ±45 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 2.
4 A Avalanche energy, single pulse EAS*3 310 mJ Power dissipation (Tc = 25°C) PD 184 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2017 ROHM Co.
, Ltd.
All rights reserved.
1/11 20171004 - Rev.
002 　 　 R6515ENJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA*5 Tsold Values Unit Min.
Typ.
Max.
- - 0.
68 ℃/W - - 80 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = VGS, ID = 430μA VGS = 10V, ID = 6.
5A RDS(on)*6 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min.
Typ.
Max.
650 - - V 　　　 - - 100 μA - - 1000 - - ±100 nA 2 - 4V 　　　 - 0.
280 0.
315 Ω --- 7.
2 - Ω 　 　 　 　 　 　 ...


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