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RQ6E080AJ

Part Number	RQ6E080AJ
Manufacturer	ROHM
Description	Small Signal MOSFET
Published	May 2, 2020
Detailed Description	RQ6E080AJ 　　Nch 30V 8A Small signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 16.5mΩ ±8.0A 1.25W lFeatures 1) Low on - resi...
Datasheet	RQ6E080AJ PDF File

Overview

RQ6E080AJ 　　Nch 30V 8A Small signal MOSFET VDSS RDS(on)(Max.
) ID PD 30V 16.
5mΩ ±8.
0A 1.
25W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT6) 3) Pb-free lead plating ; RoHS compliant lOutline SOT-457T SC-95 TSMT6 　　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Quantity (pcs) 8 3000 Taping code TCR Marking HS lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS IAS*2 EAS*2 PD*3 PD*4 Tj Tstg 30 V ±8.
0 A ±18 A ±12 V 8.
0 A 4.
7 mJ 1.
25 W 0.
95 W 150 ℃ -55 to +150 ℃ 　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/11 20190527 - Rev.
002 　　 RQ6E080AJ 　　　　　　 lThermal resistance Parameter Thermal resistance, junction - ambient 　　　　　　　　 Datasheet 　　　　　　　　　　　　　　　　　　 Symbol RthJA*3 RthJA*4 Values Unit Min.
Typ.
Max.
- - 100 ℃/W - - 132 ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　　 referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = VGS , ID = 2mA 　ΔVGS(th) 　 ID = 2mA 　　 ΔTj 　　 referenced to 25℃ Static drain - source on - state resistance RDS(on)*5 VGS = 4.
5V, ID = 8.
0A VGS = 2.
5V, ID = 4.
0A Gate resistance RG f = 1MHz, open drain Forward Transfer Admittance...

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