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SCT3017ALHR

Part Number	SCT3017ALHR
Manufacturer	ROHM
Description	Automotive Grade N-channel SiC power MOSFET
Published	May 3, 2020
Detailed Description	SCT3017ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 17mΩ 118A 427W lO...
Datasheet	SCT3017ALHR PDF File

Overview

SCT3017ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.
) ID*1 PD 650V 17mΩ 118A 427W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lApplication ・Automobile ・Switch mode power supplies (1) Gate (2) Drain (3) Source *Body Diode Please note Driver Source and Power Source are not exchangeable.
Their exchange might lead to malfunction.
lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C11 SCT3017AL lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) Recommended drive voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 118 83 295 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A A V V V °C °C www.
rohm.
com © 2018 ROHM Co.
, Ltd.
All rights reserved.
TSZ22111・14・001 1/12 TSQ50211-SCT3017ALHR 16.
Nov.
2018 - Rev.
001 SCT3017ALHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min.
Typ.
Max.
Drain - Source breakdown voltage VGS = 0V, ID = 1mA V(BR)DSS Tj = 25°C Tj = -55°C 650 650 - - Zero Gate voltage Drain current VGS = 0V, VDS =650V IDSS Tj = 25°C Tj = 150°C - 1 10 2- Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V - - -100 Gate threshold voltage VGS (th) VDS = 10V, ID = 23.
5mA 2.
7 - 5.
6 Static Drain - Source on - state resistance VGS = 18V, ID = 47A RDS(on) *5 Tj = 25°C Tj = 150°C - 17 22.
1 - 25 - Gate input resistance RG f = 1MHz, open drain - 4 - Unit V μA nA nA V mΩ Ω lThermal res...

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