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SI2341DS-HF

Kexin
Part Number SI2341DS-HF
Manufacturer Kexin
Description P-Channel MOSFET
Published May 3, 2020
Detailed Description SMD Type MOSFET P-Channel MOSFET SI2341DS-HF (KI2341DS-HF) ■ Features ● VDS (V) =-30V ● ID =-2.8A (VGS =-10V) ● RDS(O...
Datasheet PDF File SI2341DS-HF PDF File

SI2341DS-HF
SI2341DS-HF


Overview
SMD Type MOSFET P-Channel MOSFET SI2341DS-HF (KI2341DS-HF) ■ Features ● VDS (V) =-30V ● ID =-2.
8A (VGS =-10V) ● RDS(ON) < 72mΩ (VGS =-10V) ● RDS(ON) < 120mΩ (VGS =-4.
5V) ● Pb−Free Package May be Available.
The G−Suffix Denotes a Pb−Free Lead Finish +0.
22.
8 -0.
1 SOT-23-3 2.
9 +0.
2 -0.
1 0.
4 +0.
1 -0.
1 3 12 0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
2 G1 S2 3D 0-0.
1 +0.
10.
68 -0.
1 +0.
21.
1 -0.
1 +0.
21.
6 -0.
1 0.
55 0.
4 Unit: mm 0.
15 +0.
02 -0.
02 1.
Gate 2.
Source 3.
Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current *1 Pulsed Drain Current Power Dissipation *1 Thermal Resistance.
Junction- to-Ambient *1 Thermal Resistance.
Junction- to-Ambient *2 Thermal Resistance.
Junction- to-Foot Junction Temperature Storage Temperature Range Ta = 25℃ Ta = 70℃ Ta = 25℃ Ta = 70℃ *1 Surface Mounted on FR4 Board, t ≤ 5 sec.
*2 Surface Mounted on FR4 Board.
Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg 5 sec Steady State -30 ±20 -2.
8 -2.
5 -2.
2 -2.
0 -12 0.
9 0.
71 0.
57 0.
45 140 175 75 150 -55 to 150 Unit V A W ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET P-Channel MOSFET SI2341DS-HF (KI2341DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance *1 On state drain current *1 Forward Transconductance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Test Conditions ID=-250μA, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V VDS=VGS ID=-250μA VGS=-10V, ID=-2.
8A VGS=-4.
5 V, ID=-2.
0A VGS=-10V, VDS=-5V VDS=-5V, ID=-2.
8A VGS=0V, VDS=-15V, f=1MHz Min -30 -1 -6 VGS=-10V, VDS=-15V, ID=-2.
8A VGS=-4.
5V, VDS=-15V, RL=15Ω,RG...



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