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VX80M100PW

Vishay
Part Number VX80M100PW
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published May 4, 2020
Detailed Description www.vishay.com VX80M100PW Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier...
Datasheet PDF File VX80M100PW PDF File

VX80M100PW
VX80M100PW

Overview
www.
vishay.
com VX80M100PW Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
44 V at IF = 10 A 1 2 3 TO-247AD 3L PIN 1 PIN 3 PIN 2 CASE FEATURES • Trench MOS Schottky technology Available • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106 • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2 x 40 A VRRM IFSM VF at IF = 40 A (TJ = 125 °C) 100 V 550 A 0.
66 V TJ max.
175 °C Package TO-247AD 3L Circuit configuration Common cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application.
MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: as marked Mounting torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VX80M100PW Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) 100 80 40 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load IFSM 550 Operating junction temperature range Storage temperature range TJ (1) TSTG -40 to +175 -40 to +175 Note (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA UNIT V A A °C Revision: 25-Feb-2020 1 Document Number: 87009 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay...


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