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V20120SG-E3

Vishay
Part Number V20120SG-E3
Manufacturer Vishay
Description High Voltage Trench MOS Barrier Schottky Rectifier
Published May 4, 2020
Detailed Description V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench...
Datasheet PDF File V20120SG-E3 PDF File

V20120SG-E3
V20120SG-E3

Overview
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.
vishay.
com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20120SG 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20120SG 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
Package 20 A 120 V 150 A 0.
78 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Single FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for ...


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