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SQP120P06-6m7L

Vishay
Part Number SQP120P06-6m7L
Manufacturer Vishay
Description Automotive P-Channel MOSFET
Published May 5, 2020
Detailed Description www.vishay.com SQP120P06-6m7L Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET TO-220AB Top View S D ...
Datasheet PDF File SQP120P06-6m7L PDF File

SQP120P06-6m7L
SQP120P06-6m7L


Overview
www.
vishay.
com SQP120P06-6m7L Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET TO-220AB Top View S D G FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 S PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.
5 V ID (A) Configuration Package -60 0.
0067 0.
0088 -120 Single TO-220AB G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current a Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b Operating junction and storage temperature range TC = 25 °C a TC = 125 °C L = 0.
1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -120 -87 -120 -480 -80 320 300 100 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 % c.
When mounted on 1" square PCB (FR4 material) d.
Parametric verification ongoing PCB mount c SYMBOL RthJA RthJC LIMIT 40 0.
5 UNIT °C/W S18-0554-Rev.
A, 04-Jun-2018 1 Document Number: 77806 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQP120P06-6m7L Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b Dy...


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