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MRFE6VP61K25GN

Part Number	MRFE6VP61K25GN
Manufacturer	NXP
Description	RF Power LDMOS Transistors
Published	May 5, 2020
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High R...
Datasheet	MRFE6VP61K25GN PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev.
2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use from 1.
8 to 600 MHz.
Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type 87.
5–108 (1,2) CW 230 (3) Pulse (100 sec, 20% Duty Cycle) Pout (W) 1309 CW 1250 Peak Gps (dB) 24.
1 23.
0 D (%) 77.
6 72.
3 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result ...

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