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SI4490DY-HF

Part Number	SI4490DY-HF
Manufacturer	Kexin
Description	N-Channel MOSFET
Published	May 5, 2020
Detailed Description	SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Features ● VDS (V) = 200V ● ID = 4A (VGS = 10V) ● RDS...
Datasheet	SI4490DY-HF PDF File

Overview

SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Features ● VDS (V) = 200V ● ID = 4A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V) ● RDS(ON) ＜ 90mΩ (VGS = 6V) ● Pb−Free Package May be Available.
The G−Suffix Denotes a Pb−Free Lead Finish D +0.
040.
21 -0.
02 SOP-8 1.
50 0.
15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) *1 Pulsed Drain Current Avalanch Current Power Dissipation *1 Thermal Resistance.
Junction- to-Ambient Thermal Resistance.
Junction- to-Foot Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.
1mH TA=25℃ TA=70℃ *1 *1: Surface Mounted on 1" x 1" FR4 board.
Symbol VDS VGS ID IDM IAS PD RthJA RthJF TJ Tstg 10S Steady State 200 ±20 4 2.
85 3.
2 2.
3 40 15 3.
1 1.
56 21 40 80 21 150 -55 to 150 Unit V A W ℃/W ℃ ■ Marking Marking 4490 KC**** F www.
kexin.
com.
cn 1 SMD Type N-Channel MOSFET SI4490DY-HF (KI4490DY-HF) MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance *1 On State Drain Current Forward Transconductance *1 Gate Resistance *2 Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Maximum Body-Diode Continuous Current Diode Forward Voltage *1 Symbol VDSS IDSS IGSS VGS(th) RDS(On) ID(ON) gFS Rg Qg Qgs Qgd td(on) tr td(off) tf trr IS VSD Test Conditions ID=250μA, VGS=0V VDS=160V, VGS=0V VDS=160V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=4A VGS=6V, ID=4A VGS= 10 V, VDS ≥ 5V VDS=15V, ID=5A VGS=10V, VDS=100V, ID=4A *2 VGS=10V, VDS=100V, RL=25Ω, RG=6Ω,ID=4A *2 IF= 2.
8A, dI/dt= 100A/μs IS=2.
8A,VGS=0V *1: Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
*2: Guaranteed by design, not subject ...

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SI4490DY-HF N-Channel MOSFET - Kexin

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