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Si4826DY

Vishay
Part Number Si4826DY
Manufacturer Vishay
Description Dual N-Channel MOSFET
Published May 5, 2020
Detailed Description Si4826DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 3...
Datasheet PDF File Si4826DY PDF File

Si4826DY
Si4826DY

Overview
Si4826DY Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 rDS(on) (W) 0.
022 @ VGS = 10 V 0.
030 @ VGS = 4.
5 V 0.
0155 @ VGS = 10 V 0.
0205 @ VGS = 4.
5 V ID (A) 6.
3 5.
4 9.
5 8.
2 FEATURES D 100% Rg Tested S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D2 6 D2 5 D2 Top View Ordering Information: Si4826DY Si4826DY-T1 (with Tape and Reel) D1 D2 D2 D2 G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel 1 Channel 2 Parameter Symbol 10 secs Steady State 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)NO TAG Pulsed Drain Current TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)NO TAG Maximum Power DissipationNO TAG TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg 30 20 6.
3 5.
3 9.
5 7.
0 5.
4 4.
2 7.
6 5.
6 30 40 1.
3 0.
9 2.
2 1.
15 1.
4 1.
0 2.
4 1.
25 0.
9 0.
64 1.
5 0.
80 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-AmbientNO TAG Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec Steady-State Steady-State Symbol RthJA RthJC Document Number: 71137 S-31726—Rev.
B, 18-Aug-03 Channel 1 Typ Max 72 90 100 125 51 63 Channel 2 Typ Max 43 53 82 100 25 30 Unit _C/W www.
vishay.
com 1 Si4826DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter Symbol Test Condition Min Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 6.
3 A VGS = 10 V, ID = 9.
5 A VGS = 4.
5 V, ID = 5.
4 A VGS = 4.
5 V, ID = 8.
2 A VDS = 15 V,...


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