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MRF24G300H

Part Number	MRF24G300H
Manufacturer	NXP
Description	RF Power GaN Transistors
Published	May 5, 2020
Detailed Description	NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial,...
Datasheet	MRF24G300H PDF File

Overview

NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz.
These devices are suitable for use in CW, pulse, cycling and linear applications.
These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band.
There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.
Typical Performance: In 2400–2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1) Frequency (MHz) Signal Type Pin (W) Pout (W) Gps (dB) D (%) 2400 CW 10.
0 336 15.
3 70.
4 2450 10.
0 332 15.
2 73.
0 2500 10.
0 307 14.
9 74.
4 1.
All data measured in fixture with device soldered to heatsink.
Load Mismatch/Ruggedness Frequency Signal Pin Test (MHz) Type VSWR (W) Voltage 2450 Pulse (100 sec, 20% Duty Cycle) > 20:1 at All Phase Angles 12.
6 Peak 55 Result No Device Degradation Features  Advanced GaN on SiC, for optimal thermal performance  Characterized for CW, long pulse (up to several seconds) and short pulse operations  Device can be used in a single--ended or push--pull configuration  Input matched for simplified input circuitry  Qualified up to 55 V  Suitable for linear application Typical Applications  Industrial heating  Welding and heat sealing  Plasma generation  Lighting  Scientific instrumentation  Medical – Microwave ablation – Diathermy Document Number: MRF24G300HS Rev.
0, 09/2019 MRF24G300HS MRF24G300H 2400–2500 MHz, 300 W CW, 50 V WIDEBAND RF POWER GaN TRANSISTORS NI--780S--4L MRF24G300HS NI--780H--4L MRF24G300H Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor.
Figure 1.
Pin Connections  2019 NXP B.
V.
RF Device...

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