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AFV10700GS

Part Number	AFV10700GS
Manufacturer	NXP
Description	RF Power LDMOS Transistors
Published	May 5, 2020
Detailed Description	NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF pow...
Datasheet	AFV10700GS PDF File

Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz.
These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains.
Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 50 800 Peak 17.
5 52.
1 700 Peak 19.
0 56.
1 52 850 Peak 17.
5 51.
...

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