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VBT4045BP-E3

Vishay
Part Number VBT4045BP-E3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published May 6, 2020
Detailed Description www.vishay.com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypas...
Datasheet PDF File VBT4045BP-E3 PDF File

VBT4045BP-E3
VBT4045BP-E3

Overview
www.
vishay.
com VBT4045BP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
28 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PIN 1 PIN 2 K HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A TOP max.
(AC mode) TJ max.
(DC forward current) Package Circuit configuration 40 A 45 V 240 A 0.
51 V 150 °C 200 °C D2PAK (TO-263AB) Single TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig.
1) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load VRRM IF(DC) (1) IFSM Operating junction temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h TOP TJ (1) Notes (1) With heatsink (2) Meets the requirements of IEC 61215 Ed.
2 bypass diode thermal test VBT4045BP 45 40 240 -40 to +150  200 UNIT V A A °C °C Revision: 02-Jul-2018 1 Document Number: 89442 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
T...


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