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SUD45P04-16P

Vishay
Part Number SUD45P04-16P
Manufacturer Vishay
Description P-Channel MOSFET
Published May 6, 2020
Detailed Description P-Channel 40 V (D-S) MOSFET SUD45P04-16P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0162 at VGS = ...
Datasheet PDF File SUD45P04-16P PDF File

SUD45P04-16P
SUD45P04-16P

Overview
P-Channel 40 V (D-S) MOSFET SUD45P04-16P Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max.
0.
0162 at VGS = - 10 V - 40 0.
0230 at VGS = - 4.
5 V ID (A) - 36 - 24 Qg (Typ.
) 67 TO-252 Drain Connected to Tab GDS Top View Ordering Information: SUD45P04-16P-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters S G P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.
1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 40 ± 20 - 36 - 29 - 100 - 32 51 41.
7b 2.
1 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a.
Duty cycle  1 %.
b.
See SOA curve for voltage derating.
c.
When mounted on 1" square PCB (FR-4 material).
Symbol RthJA RthJC Limit 60 3 Unit °C/W Document Number: 63372 www.
vishay.
com S11-1657-Rev.
A, 15-Aug-11 1 This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 SUD45P04-16P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = - 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V, TJ = 125 °C VDS = - 40 V...


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