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R1QBA3636CBG

Renesas
Part Number R1QBA3636CBG
Manufacturer Renesas
Description 36-Mbit DDRII+ SRAM
Published May 8, 2020
Detailed Description R1QBA36**CB* / R1QEA36**CB* Series R1QBA3636CBG / R1QBA3618CBG / R1QBA3609CBG R1QEA3636CBG / R1QEA3618CBG / R1QEA3609CB...
Datasheet PDF File R1QBA3636CBG PDF File

R1QBA3636CBG
R1QBA3636CBG

Overview
R1QBA36**CB* / R1QEA36**CB* Series R1QBA3636CBG / R1QBA3618CBG / R1QBA3609CBG R1QEA3636CBG / R1QEA3618CBG / R1QEA3609CBG R1QHA3636CBG / R1QHA3618CBG / R1QHA3609CBG R1QLA3636CBG / R1QLA3618CBG / R1QLA3609CBG 36-Mbit DDRII+ SRAM 2-word Burst R10DS0159EJ0009 Rev.
0.
09a 2011.
09.
14 Description The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
It integrates unique synchronous peripheral circuitry and a burst counter.
All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.
These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin plastic FBGA package.
# = B: Latency =2.
5, w/o ODT # = E: Latency =2.
5, w/ ODT # = H: Latency =2.
0, w/o O...


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