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MG6401WZ

ROHM
Part Number MG6401WZ
Manufacturer ROHM
Description Insulated Gate Bipolar Transistor
Published May 9, 2020
Detailed Description MG6401WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 65...
Datasheet PDF File MG6401WZ PDF File

MG6401WZ
MG6401WZ

Overview
MG6401WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.
) Max.
Possible Chips per Wafer 650V 30A 1.
5V 1026pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj Datash...


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