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MG6303WZ

ROHM
Part Number MG6303WZ
Manufacturer ROHM
Description Insulated Gate Bipolar Transistor
Published May 9, 2020
Detailed Description MG6303WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 65...
Datasheet PDF File MG6303WZ PDF File

MG6303WZ
MG6303WZ

Overview
MG6303WZ 650V 30A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.
) Max.
Possible Chips per Wafer 650V 30A 1.
5V 1137pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching lApplication PFC UPS Welding Solar Inverter IH lOutline Wafer lInner Circuit (2) (1) (3) lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Co...


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