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AO3160E

Alpha & Omega Semiconductors
Part Number AO3160E
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published May 11, 2020
Detailed Description General Description • Logic Level Driving 4.5V • ESD Protection • RoHS and Halogen Free Compliant Applications • Load Sw...
Datasheet PDF File AO3160E PDF File

AO3160E
AO3160E

Overview
General Description • Logic Level Driving 4.
5V • ESD Protection • RoHS and Halogen Free Compliant Applications • Load Switch AO3160E 600V,0.
04A N-Channel MOSFET Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) Typical ESD protection 700V 0.
04A < 500Ω < 600Ω HBM Class 2 Top View D Bottom View D D SG G G AO3160E Orderable Part Number AO3160E S Package Type SOT23A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current A,F TA=70°C Pulsed Drain Current B Peak diode recovery dv/dt VGS ID IDM dv/dt Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S Form Minimum Order Quantity Tape & Reel 3000 Maximum 600 ±20 0.
04 0.
03 0.
12 5 1.
39 0.
89 -55 to 150 300 Units V V A V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typical 70 100 63 Maximum 90 125 80 Units °C/W °C/W °C/W Rev.
1.
0: May 2018 www.
aosmd.
com Page 1 of 5 AO3160E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Cofficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=5V, ID=8µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.
016A VGS=4.
5V, ID=0.
016A gFS Forward Transconductance VDS=40V, ID=0.
016A VSD Diode Forward Voltage IS=0.
016A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Ca...


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