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AON7230

Alpha & Omega Semiconductors
Part Number AON7230
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published May 12, 2020
Detailed Description AON7230 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge •...
Datasheet PDF File AON7230 PDF File

AON7230
AON7230

Overview
AON7230 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Logic level driven Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 100V 47A < 11.
5mΩ < 15.
5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Synchronous Rectification in cell phone Quick Charger 100% UIS Tested 100% Rg Tested DFN 3.
3x3.
3 Top View Bottom View Pin 1 Pin 1 Orderable Part Number AON7230 Package Type DFN 3.
3x3.
3 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.
1mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 100 ±20 47 30 125 13 10 33 54 120 54 21 4.
1 2.
6 -55 to 150 Units V V A A A mJ V W W °C Typ Max 25 30 50 60 1.
8 2.
3 Units °C/W °C/W °C/W Rev.
1.
0: October 2015 www.
aosmd.
com Page 1 of 6 AON7230 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=13A Forward Transconductance Diode Forward Voltage VGS=4.
5V, ID=11A VDS=5V, ID=13A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS...


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