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MG6307WZ

ROHM
Part Number MG6307WZ
Manufacturer ROHM
Description Insulated Gate Bipolar Transistor
Published May 12, 2020
Detailed Description MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 65...
Datasheet PDF File MG6307WZ PDF File

MG6307WZ
MG6307WZ

Overview
MG6307WZ 650V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.
) Max.
Possible Chips per Wafer 650V 25A 1.
5V 1328pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching lApplication PFC UPS Welding Solar Inverter IH lOutline Wafer lInner Circuit (2) (1) (3) lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Co...


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