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EPC2038

EPC
Part Number EPC2038
Manufacturer EPC
Description Power Transistor
Published May 12, 2020
Detailed Description eGaN® FET DATASHEET EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode VDS , 100 V ...
Datasheet PDF File EPC2038 PDF File

EPC2038
EPC2038

Overview
eGaN® FET DATASHEET EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode VDS , 100 V RDS(on) , 3300 mΩ ID , 0.
5 A D G S EPC2038 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 Continuous (TA = 25°C, RθJA = 100°C/W) ID Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 0.
5 A 0.
5 6 V -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Res...


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